mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 8

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mrf6s9160h

Manufacturer Part Number
mrf6s9160h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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8
MRF6S9160HR3 MRF6S9160HSR3
10
10
10
10
Figure 13. MTTF Factor versus Junction Temperature
23
22
21
20
19
18
17
16
10
21
20
19
18
17
16
9
8
7
90
0
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
Figure 11. Power Gain and Drain Efficiency
100
Figure 12. Power Gain versus Output Power
V
1
DD
25_C
85_C
T
TYPICAL CHARACTERISTICS
= 12 V
110
C
50
= −30_C
P
versus CW Output Power
120
T
16 V
out
J
P
, JUNCTION TEMPERATURE (°C)
D
, OUTPUT POWER (WATTS) CW
out
2
for MTTF in a particular application.
, OUTPUT POWER (WATTS) CW
130
100
20 V
140
10
150
η
150
G
D
ps
24 V
160
V
I
f = 880 MHz
DQ
170
DD
200
= 1200 mA
= 28 Vdc
180
28 V
I
f = 880 MHz
DQ
85_C
100
190
= 1200 mA
250
−30_C
200
2
32 V
210
300
300
70
60
50
40
30
20
10
0
Freescale Semiconductor
RF Device Data

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