mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 7

• Manufacturer Part Number: mrf6s9160h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−80
Figure 7. Intermodulation Distortion Products
V
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
DD
1
= 28 Vdc, I
3rd Order
P
out
DQ
versus Output Power
, OUTPUT POWER (WATTS) PEP
7th Order
= 1200 mA
10
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain
5th Order
61
59
57
55
53
51
49
47
60
50
40
30
20
10
0
26
1
V
f = 880 MHz, N−CDMA IS−95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
G
DD
and Drain Efficiency versus Output Power
ps
P1dB = 53.02 dBm (200.36 W)
Figure 9. Pulse CW Output Power versus
ACPR
= 28 Vdc, I
28
TYPICAL CHARACTERISTICS
100
P
P3dB = 53.98 dBm (249.98 W)
out
DQ
, OUTPUT POWER (WATTS) AVG.
30
η
= 1200 mA
P
D
in
, INPUT POWER (dBm)
P6dB = 54.7 dBm (294.78 W)
Input Power
10
400
32
ALT1
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
DD
= 28 Vdc, I
34
−10
−20
−30
−40
−50
−60
T
C
0
DQ
0.1
= −30_C
36
Figure 8. Intermodulation Distortion Products
= 1200 mA
85_C
3rd Order
V
I
(f1 + f2)/2 = Center Frequency of 880 MHz
5th Order
7th Order
DQ
85_C
DD
100
−30_C
= 1200 mA, Two−Tone Measurements
= 28 Vdc, P
38
Ideal
−30_C
Actual
25_C
25_C
85_C
25_C
versus Tone Spacing
TWO−TONE SPACING (MHz)
300
out
40
−20
−30
−40
−50
−60
−70
−80
MRF6S9160HR3 MRF6S9160HSR3
= 70 W (Avg.)
1
10
100
7