mrf6s9160h Freescale Semiconductor, Inc, mrf6s9160h Datasheet - Page 6

• Manufacturer Part Number: mrf6s9160h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

6
MRF6S9160HR3 MRF6S9160HSR3
23
22
21
20
19
18
17
16
15
Figure 5. Two - Tone Power Gain versus
1
1200 mA
900 mA
I
600 mA
V
Two−Tone Measurements, 100 kHz Tone Spacing
DQ
DD
= 1800 mA
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Output Power
10
1500 mA
Figure 3. Single - Carrier N - CDMA Broadband Performance
Figure 4. Single - Carrier N - CDMA Broadband Performance
20.9
20.6
20.3
19.7
19.4
19.1
18.8
18.5
18.2
17.9
20.3
19.7
19.4
19.1
18.8
18.5
18.2
17.9
17.6
17.3
20
20
840
840
ACPR
ALT1
ALT1
850
850
η
η
V
I
Paging, Traffic Codes 8 Through 13)
DQ
D
D
DD
TYPICAL CHARACTERISTICS
V
I
Paging, Traffic Codes 8 Through 13)
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
DQ
860
860
= 28 Vdc, P
100
DD
= 1200 mA, N−CDMA IS−95 (Pilot, Sync,
= 28 Vdc, P
@ P
@ P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
870
870
out
out
out
ACPR
400
= 35 Watts Avg.
= 70 Watts Avg.
= 70 W (Avg.)
out
IRL
880
880
= 35 W (Avg.)
890
890
IRL
−10
−20
−30
−40
−50
−60
−70
900
900
G
G
Figure 6. Third Order Intermodulation Distortion
ps
ps
V
Two−Tone Measurements, 100 kHz Tone Spacing
DD
1500 mA
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
910
910
I
1
DQ
= 600 mA
P
920
920
out
32
30
28
26
24
−40
−45
−50
−55
−60
44
42
40
38
36
−30
−36
−42
−48
−54
−65
−60
, OUTPUT POWER (WATTS) PEP
versus Output Power
10
−5
−8
−11
−14
−17
−20
−3
−6
−9
−12
−15
−18
1200 mA
Freescale Semiconductor
1800 mA
RF Device Data
100
900 mA
400