MD7IC2250N Freescale Semiconductor, Inc, MD7IC2250N Datasheet - Page 2

• Manufacturer Part Number: MD7IC2250N
• Description: 2110-2170 Mhz, 5.3 W Avg., 28 V Single W-cdma Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

2
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 - - Off Characteristics
Stage 1 - - On Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Each side of device measured separately.
Case Temperature 74°C, 5.3 W CW, 2170 MHz
Case Temperature 80°C, 50 W CW, 2170 MHz
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
DS
DS
GS
DS
DS
DD
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
D
DQ1(A+B)
DQ1(A+B)
GS
GS
DS
= 23 μAdc)
= 0 Vdc)
= 0 Vdc)
DQ1(A+B)
DQ2(A+B)
DQ1(A+B)
DQ2(A+B)
= 0 Vdc)
(4)
Test Methodology
= 80 mA)
= 80 mA, Measured in Functional Test)
(4)
Characteristic
= 80 mA
= 520 mA
= 80 mA
= 520 mA
(1,2)
Test Methodology
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Rating
3
Symbol
V
V
V
I
I
I
GS(th)
GG(Q)
GS(Q)
GSS
DSS
DSS
Symbol
Symbol
V
R
Package Peak Temperature
V
V
T
P
T
DSS
T
θJC
stg
GS
DD
C
in
J
Min
1.2
6.0
—
—
—
—
260
1A (Minimum)
A (Minimum)
II (Minimum)
Typ
2.0
2.7
7.0
-- 65 to +150
—
—
—
Value
--0.5, +65
--0.5, +10
Class
32, +0
Value
Freescale Semiconductor
0.95
150
225
5.3
1.1
5.0
28
(2,3)
Max
2.7
8.0
10
—
1
1
RF Device Data
(continued)
°C/W
Unit
dBm
Unit
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C