MD7IC2250N Freescale Semiconductor, Inc, MD7IC2250N Datasheet - Page 4

• Manufacturer Part Number: MD7IC2250N
• Description: 2110-2170 Mhz, 5.3 W Avg., 28 V Single W-cdma Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

4
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
Table 5. Electrical Characteristics
Typical Performance (In Freescale Test Fixture, 50 ohm system) V
2110--2170 MHz Bandwidth
P
IMD Symmetry @ 50 W PEP, P
VBW Resonance Point
Quiescent Current Accuracy over Temperature
Gain Flatness in 60 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Each side of device measured separately.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
with 4.7 kΩ Gate Feed Resistors (--30 to 85°C)
(--30°C to +85°C)
(--30°C to +85°C)
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or
AN1987.
@ 1 dB Compression Point, CW

30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted)
= 5.3 W Avg.
(1,2)
Stage 1
Stage 2
DD
= 28 Vdc, I
(continued)
Symbol
IMD
VBW
∆P1dB
P1dB
∆I
∆G
G
DQ1(A+B)
QT
sym
F
res
= 80 mA, I
Min
—
—
—
—
—
—
—
—
DQ2(A+B)
0.028
0.028
Typ
1.5
5.0
0.1
54
16
70
= 520 mA,
Freescale Semiconductor
Max
—
—
—
—
—
—
—
—
RF Device Data
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
%