MD7IC2250N Freescale Semiconductor, Inc, MD7IC2250N Datasheet - Page 3

• Manufacturer Part Number: MD7IC2250N
• Description: 2110-2170 Mhz, 5.3 W Avg., 28 V Single W-cdma Rf Ldmos Wideband Integrated Power Amplifiers
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Stage 2 - - Off Characteristics
Stage 2 - - On Characteristics
Functional Tests
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
P
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
I
DQ2(A+B)
out
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(V
(V
(V
(V
(V
(V
(V
= 5.3 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
DS
DS
GS
DS
DS
DD
GS
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 520 mA, P
(2,3)
D
DQ2(A+B)
DQ2(A+B)
D
GS
GS
DS
out
= 150 μAdc)
= 1 Adc)
(In Freescale Wideband 2110--2170 Test Fixture, 50 ohm system) V
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 5.3 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
(1)
(1)
= 520 mA)
= 520 mA, Measured in Functional Test)
(1)
Characteristic
Frequency
2140 MHz
2170 MHz
2110 MHz
(T
A
= 25°C unless otherwise noted)
(continued)
DD
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
Symbol
V
= 28 Vdc, I
V
V
V
ACPR
I
I
I
PAE
DS(on)
GS(th)
GS(Q)
GG(Q)
G
IRL
DSS
DSS
GSS
ps
(dB)
31.2
31.1
31.1
G
DD
ps
= 28 Vdc, I
DQ1(A+B)
30.0
15.0
Min
1.2
5.5
0.1
—
—
—
—
—
—
PAE
17.0
16.8
16.8
(%)
= 80 mA, I
DQ1(A+B)
--50.1
0.24
31.1
16.8
Typ
--14
2.0
2.7
6.3
—
—
—
= 80 mA,
DQ2(A+B)
ACPR
(dBc)
--48.3
--49.3
--50.1
--47.0
Max
34.0
2.7
7.5
1.2
10
—
—
--9
1
1
= 520 mA,
(continued)
(dB)
IRL
--14
--11
--9
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
%
3