MD7IC2250N Freescale Semiconductor, Inc, MD7IC2250N Datasheet - Page 7

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MD7IC2250N

Manufacturer Part Number
MD7IC2250N
Description
2110-2170 Mhz, 5.3 W Avg., 28 V Single W-cdma Rf Ldmos Wideband Integrated Power Amplifiers
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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RF Device Data
Freescale Semiconductor
32.5
31.5
30.5
33
32
31
30
Figure 5. Power Gain, Power Added Efficiency, IRL and ACPR
31.7
31.6
31.5
31.4
31.3
31.2
31.1
30.9
30.8
30.7
--10
--20
--30
--40
--50
--60
31
--1
--2
--3
--4
--5
1
0
2060
1
5
Broadband Performance @ P
ACPR
Figure 6. Intermodulation Distortion Products
V
I
V
I
(f1 + f2)/2 = Center Frequency of 2140 MHz
DQ2(A+B)
ACPR
DQ2(A+B)
G
DD
DD
--1 dB = 13 W
Compression (PARC) versus Output Power
ps
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
Figure 7. Output Peak- -to- -Average Ratio
PAE
2080
= 28 Vdc, P
= 28 Vdc, P
V
f = 2140 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel
DD
= 520 mA
TYPICAL CHARACTERISTICS
= 520 mA, Two--Tone Measurements
10
= 28 Vdc, I
2100
versus Two- -Tone Spacing
P
out
Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
out
IM7--L
out
TWO--TONE SPACING (MHz)
IM7--U
= 5.3 W (Avg.), I
= 50 W (PEP), I
, OUTPUT POWER (WATTS)
Probability on CCDF
2120
f, FREQUENCY (MHz)
DQ1(A+B)
15
--2 dB = 18 W
2140
= 80 mA, I
10
IM5--U
IM5--L
DQ1(A+B)
DQ1(A+B)
IM3--U
PAE
20
2160
out
IM3--L
DQ2(A+B)
PARC
= 80 mA
= 80 mA
= 5.3 Watts Avg.
MD7IC2250NR1 MD7IC2250GNR1 MD7IC2250NBR1
--3 dB = 24 W
2180
= 520 mA
25
2200
G
IRL
ps
2220
100
30
16.8
16.6
16.4
16.2
16
--47
--48
--49
--50
--51
--52
60
50
40
30
20
10
0
--20
--25
--30
--35
--40
--45
--50
--5
--9
--13
--17
--21
--25
7

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