tle8261-2e Infineon Technologies Corporation, tle8261-2e Datasheet - Page 80
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tle8261-2e
Manufacturer Part Number
tle8261-2e
Description
Universal System Basis Chip Hermes
Manufacturer
Infineon Technologies Corporation
Datasheet
1.TLE8261-2E.pdf
(83 pages)
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Table 24
Pin
Vs
Vcc1µC
RO
INT
LH
SDO
CLK, SDI
CSN
TxDCAN, TxDLIN1,
TxDLIN2, TxDLIN3
RxDCAN, RxDLIN1,
RxDLIN2, RxDLIN3
15.3
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330Ω) have been performed. The results
and test condition is available in a test report. The values for the test are listed in
Table 25
Performed Test
ESD at pin CANH, CANL,
BUSx, Vs versus GND
ESD at pin CANH, CANL,
BUSx, Vs versus GND
1) ESD susceptibility “ESD GUN” contact discharge (R=330Ohm C=150pF) (DIN EN 61000-4-2) tested according LIN EMC
Data Sheet
1.3 Test Specification and ICT EMC Evaluation of CAN Transceiver. Tested by external test house (IBEE Zwickau, EMC
Test report Nr. 06-02-09a)
PIN in Factory Flash Mode
ESD Tests
ESD “Gun test”
Level
typ. 4.5V
5V ± 2%
Pull-up resistor
Pull-up resistor
High impedance
High impedance
Pull-down resistor
Pull-up resistor
Pull-up resistor
High impedance
Result
> 8
< -8
80
Comment
Voltage output from SBC. No voltage applied from
external.
To be applied from external
Can be driven from external
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Can be driven from external if required
Unit
kV
kV
Table 25
Remarks
positive pulse
negative pulse
Application Information
below.
Rev. 1.0, 2009-05-26
TLE8261-2E
1)
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