tda6651tt/c3/s3 NXP Semiconductors, tda6651tt/c3/s3 Datasheet - Page 29

• Manufacturer Part Number: tda6651tt/c3/s3
• Description: 5 V Mixer/oscillator And Low Noise Pll Synthesizer For Hybrid Terrestrial Tuner Digital And Analog
• Manufacturer: NXP Semiconductors

NXP Semiconductors
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10] The frequency shift is defined as a change in oscillator frequency when the supply voltage varies from V
[11] The frequency drift is defined as a change in oscillator frequency when the ambient temperature varies from T
[12] The supply ripple susceptibility is measured in the measurement circuit according to
[13] This is the level of divider interferences close to the IF frequency. For example channel S3: f
[14] Crystal oscillator interference means the 4 MHz sidebands caused by the crystal oscillator.
[15] The step frequency rejection is the level of step frequency sidebands (e.g. 166.67 kHz) related to the carrier.
[16] This is the level of the 9th and 11th harmonics of the 4 MHz crystal oscillator into the IF output.
[17] Pin AGC (pin 9 for TDA6650TT, pin 30 for TDA6651TT) must not be connected to a voltage higher than 3.6 V.
TDA6650TT_6651TT_5
Product data sheet
Fig 5. Input admittance (s
The drive level is expected with a 50
series resistance values.
The V
The RF frequency range is defined by the oscillator frequency range and the Intermediate Frequency (IF).
The 1 % cross modulation performance is measured with AGC detector turned off (AGC bits set to 110).
Channel SO2 beat is the interfering product of f
f
The IF output signal stays stable within the range of the step frequency for any RF input level up to 120 dB V.
(N + 5)
wanted carrier.
Limits are related to the tank circuits used in
Frequency bands may be adjusted by the choice of external components.
V
from T
analyzer connected to the IF output. An unmodulated RF signal is applied to the test board RF input. A sine wave signal with a
frequency of 500 kHz is superimposed onto the supply voltage. The amplitude of this ripple signal is adjusted to bring the 500 kHz
sidebands around the IF carrier to a level of 53.5 dB with respect to the carrier.
The low and mid band inputs must be left open (i.e. not connected to any load or cable); the high band inputs are connected to an
hybrid.
osc
CC
= 5 V to 5.25 V. The oscillator is free running during this measurement.
2
XTOUT
amb
1 MHz pulling is the input level of channel N + 5, at frequency 1 MHz lower, causing 100 kHz FM sidebands 30 dB below the
f
IFpix
= 25 C to 0 C. The oscillator is free running during this measurement.
level is measured when the pin XTOUT is loaded with 5 k in parallel with 10 pF.
or 2
f
RFpix
f
11
osc
10
10
) of the low band mixer (40 MHz to 200 MHz); Y
.
5
5
10
series resistance of the crystal at series resonance. The drive level will be different with other
5
2
2
Figure 27
RFpix
Rev. 05 — 10 January 2007
, f
2
IF
and
and f
28
osc
for digital application or
1
1
1
of channel SO2; f
5 V mixer/oscillator and low noise PLL synthesizer
TDA6650TT; TDA6651TT
0.5
beat
0.2
0.5
0.5
200 MHz
40 MHz
Figure
= 37.35 MHz. The possible mechanisms are:
Figure 29
o
= 20 mS
27, 28,
osc
0.2
0.2
mce160
= 158.15 MHz,
0
and
29
j
j
30
and
CC
for hybrid application.
30
= 5 V to 4.5 V or from
using a spectrum
amb
1
4
© NXP B.V. 2007. All rights reserved.
f
= 25 C to 50 C or
osc
= 39.5375 MHz.
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