cy62127dv30ll-70zsi Cypress Semiconductor Corporation., cy62127dv30ll-70zsi Datasheet
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cy62127dv30ll-70zsi
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cy62127dv30ll-70zsi Summary of contents
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... Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O LOW, then data from memory will appear on I/O the truth table at the back of this data sheet for a complete ® ...
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... CY62127DV30LL CY62127DV30L 2.2 3.0 CY62127DV30LL Notes pins are not connected to the die (DNU) can be left Vss to ensure proper operation. (Expansion Pins on FBGA Package 16M 32M). 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Document #: 38-05229 Rev ...
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Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature .................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ......................................................................... −0.3V to 3.9V DC ...
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Capacitance Parameter OUT Thermal Resistance Parameter Description θ Thermal Resistance (Junction to Ambient) JA θ Thermal Resistance (Junction to Case Test Loads and Waveforms V CC OUTPUT INCLUDING JIG ...
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... HZCE HZBE HZWE 15. The internal Write time of the memory is defined by the overlap of WE these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates the write. Document #: 38-05229 Rev. *D ...
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Switching Waveforms Read Cycle No. 1 (Address Transition Controlled) ADDRESS DATA OUT PREVIOUS DATA VALID [16,17, 18] Read Cycle No. 2 (OE Controlled) Notes: 16. Device is continuously selected HIGH for Read cycle. ...
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Switching Waveforms (continued) Write Cycle No. 1 (WE Controlled) ADDRESS BHE/BLE OE DATA I/O DON'T CARE t HZOE [14, 15, 19, 20, 21] Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE / BLE OE ...
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Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O DON'T CARE Write Cycle No. 4 (BHE-/BLE-controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O DON'T CARE Document #: ...
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... Ordering Information Speed (ns) Ordering Code 45 CY62127DV30LL-45BVI CY62127DV30LL-45BVXI CY62127DV30LL-45ZSI CY62127DV30LL-45ZSXI 55 CY62127DV30L-55BVI CY62127DV30LL-55BVI CY62127DV30LL-55BVXI CY62127DV30L-55ZSI CY62127DV30L-55ZSXI CY62127DV30LL-55ZSI 70 CY62127DV30L-70BVI CY62127DV30LL-70BVI CY62127DV30LL-70BVXI CY62127DV30L-70ZSI CY62127DV30LL-70ZSI Document #: 38-05229 Rev. *D I/O –I/O I/O –I High Z High Z High Z High Z Data Out Data Out High Z Data Out Data Out High Z High Z ...
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Package Diagrams Document #: 38-05229 Rev. *D 48-Lead VFBGA ( mm) BV48A CY62127DV30 ® MoBL 51-85150-*B Page ...
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Package Diagrams MoBL is a registered trademark, and MoBL2 and More Battery Life are trademarks of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05229 Rev. *D © ...
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Document History Page Document Title: CY62127DV30 MoBL Document Number: 38-05229 REV. ECN NO. Issue Date ** 117690 08/27/02 *A 127311 06/13/03 *B 128341 07/22/03 *C 129000 08/29/03 *D 316039 See ECN Document #: 38-05229 Rev. *D (64K ...