cy62127dv30ll-70zsi Cypress Semiconductor Corporation., cy62127dv30ll-70zsi Datasheet - Page 4

• Manufacturer Part Number: cy62127dv30ll-70zsi
• Description: 1 Mb 64k X 16 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 38-05229 Rev. *D
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes:
10. BHE
V
I
t
t
7. Tested initially and after any design or proces changes that may affect these parameters.
8. Test condition for the 45-ns part is a load capacitance of 30 pF.
9. Full device operation requires linear V
Parameter
CCDR
CDR
R
DR
[9]
Parameter
θ
θ
[7]
JC
BHE . BLE
JA
.
Parameters
BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.
CE or
Parameter
V
R
V
CC
R 1
R 2
TH
TH
C
C
OUT
Thermal Resistance (Junction to Ambient)
IN
[7]
Thermal Resistance (Junction to Case)
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
OUTPUT
for Data Retention
INCLUDING
V
Description
JIG AND
SCOPE
CC
C = 50 pF
L
Equivalent to:
Description
CC
[10]
ramp from V
Output Capacitance
R1
Input Capacitance
OUTPUT
2.5V (2.2– 2.7V)
[8]
Description
V
t
CC(min.)
CDR
16600
15400
DR
8000
1.2
to V
TH ÉVENIN EQUIVALENT
V
V
R2
CC
IN
CC(min.)
> V
=1.5V, CE > V
[7]
CC
> 200 µs.
[7]
− 0.2V or V
DATA RETENTION MODE
R
V
TH
CC
Conditions
Rise Time:
Still Air, soldered on a 3 x 4.5 inch,
GND
Typ
1 V/ns
two-layer printed circuit board
CC
V
DR
T
A
− 0.2V,
V
IN
Test Conditions
> 1.5V
TH
= 25°C, f = 1 MHz
V
Test Conditions
10%
< 0.2V
CC
= V
3.0V (2.7 – 3.6V)
CC(typ)
ALL INPUT PULSES
90%
1103
1554
L
LL
645
1.75
Min.
200
1.5
V CC(min.)
0
t
R
Max.
90%
Typ
CY62127DV30
8
8
FBGA TSOP II Unit
10%
Fall Time:
1 V/ns
.[4]
55
12
Max.
4
3
MoBL
Page 4 of 12
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11
Unit
Ω
Ω
Ω
V
Unit
pF
pF
Unit
°C/W
°C/W
µA
µs
ns
V
®