m58lt256jsb STMicroelectronics, m58lt256jsb Datasheet - Page 56

• Manufacturer Part Number: m58lt256jsb
• Description: 256 Mbit 16 Mb 16, Multiple Bank, Multilevel, Burst 1.8 V Supply, Secure Flash Memories
• Manufacturer: STMicroelectronics

DC and AC parameters
56/108
Table 20.
1. Sampled only, not 100% tested.
2. V
Symbol
I
I
I
DD6
I
I
DD5
DD7
PP1
PP3
I
I
I
I
I
I
DD1
DD2
DD3
DD4
PP2
I
(2)
LO
LI
DD
(1)
(1)
(1),
(1)
(1)
dual operation current is the sum of read and program or erase currents.
Input leakage current
Output leakage current
Supply current
asynchronous Read (f=5 MHz)
Supply current
synchronous read (f=52 MHz)
Supply current (reset)
Supply current (standby)
Supply current (automatic
standby)
Supply current (program)
Supply current (erase)
Supply current
(dual operations)
Supply current program/ erase
suspended (standby)
V
V
V
V
PP
PP
PP
PP
DC characteristics - currents
supply current (program)
supply current (erase)
supply current (read)
supply current (standby)
Parameter
synchronous read (continuous
asynchronous read in another
Program/erase in one bank,
Program/erase in one bank,
f=52 MHz) in another bank
0 V ≤ V
RP = V
0 V ≤ V
E = V
E = V
E = V
E = V
Test condition
Continuous
V
V
V
V
V
V
V
V
V
V
PP
PP
PP
PP
16 word
K = V
K = V
PP
PP
PP
PP
PP
PP
4 word
8 word
IL
DD
IL
bank
DD
OUT
SS
= V
= V
= V
= V
IN
, G = V
, G = V
= V
= V
= V
= V
≤ V
≤ V
± 0.2 V
± 0.2 V
≤ V
± 0.2 V
SS
SS
PPH
PPH
PPH
PPH
≤ V
DD
DD
DD
DD
DD
DD
DDQ
DDQ
IH
IH
M58LT256JST, M58LT256JSB
Typ
0.2
0.2
0.2
0.2
13
16
18
22
23
50
50
50
35
35
35
35
48
58
50
8
8
Max
110
110
110
110
±1
±1
15
19
20
25
27
50
50
50
50
65
77
22
22
5
5
5
5
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA