cy14b101l Cypress Semiconductor Corporation., cy14b101l Datasheet - Page 9

• Manufacturer Part Number: cy14b101l
• Description: 1-mbit 128k X 8 Nvsram
• Manufacturer: Cypress Semiconductor Corporation.

Document #: 001-06400 Rev. *D
AC Switching Characteristics
SRAM Read Cycle
t
t
t
t
t
t
t
t
t
t
t
SRAM Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. Measured ±200mV from steady state output voltage.
11. If WE is Low when CE goes Low,the outputs remain in the High Impedance State
Parameter
ACE
RC
AA
DOE
OHA
LZCE
HZCE
LZOE
HZOE
PU
PD
WC
PWE
SCE
SD
HD
AW
SA
HA
HZWE
LZWE
8. WE must be HIGH during SRAM Read Cycles.
9. Device is continuously selected with CE and OE both Low.
Cypress
[9]
[7]
[7]
[8]
[10]
[10]
[10]
[10]
[10]
[10,11]
Parameter
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Parameter
ACS
RC
AA
OE
OH
LZ
HZ
OLZ
OHZ
PA
PS
WC
WP
CW
DW
DH
AW
AS
WR
WZ
OW
Alt.
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Write Cycle Time
Write Pulse Width
Chip Enable To End of Write
Data Set-Up to End of Write
Data Hold After End of Write
Address Set-Up to End of Write
Address Set-Up to Start of Write
Address Hold After End of Write
Write Enable to Output Disable
Output Active after End of Write
Description
PRELIMINARY
Min.
25
25
20
20
10
20
25 ns part
3
3
0
0
0
0
0
3
Max.
25
25
12
10
10
25
10
Min.
35
35
25
25
12
25
35 ns part
3
3
0
0
0
0
0
3
Max.
35
35
13
35
13
15
13
Min.
45
45
30
30
15
30
45 ns part
3
3
0
0
0
0
0
3
CY14B101L
Max.
Page 9 of 19
45
15
45
20
15
45
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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