hyb18m1g16 Qimonda, hyb18m1g16 Datasheet - Page 44
hyb18m1g16
Manufacturer Part Number
hyb18m1g16
Description
Drams For Mobile Applications 1-gbit X16 Ddr Mobile-ram Rohs Compliant
Manufacturer
Qimonda
Datasheet
1.HYB18M1G16.pdf
(65 pages)
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1) These parameters account for the number of clock cycles and depend on the operating frequency, as follows:
2) A maximum of eight AUTOREFRESH commands can be posted to the DDR Mobile-RAM device, meaning that the maximum absolute
Rev.1.0, 2007-03
10242006-Y557-TZXW
Parameter
AUTO REFRESH to ACTIVE/AUTO REFRESH command period
PRECHARGE command period
Self refresh exit to next valid command delay
Refresh period
Average periodic refresh interval (8192 rows)
Command
no. of clock cycles = specified delay / clock period; round to the next higher integer.
interval between any Refresh command and the next Refresh command is 8 * tREFI.
A10 (AP)
Address
CKE
DQ
CK
CK
Pre All
PRE
High-Z
NOP
t
RP
Self Refresh
Timing Parameters for AUTO REFRESH and SELF REFRESH Commands
Mode
Enter
ARF
> t
RFC
Self Refresh
Exit from
Mode
NOP
44
t
t
t
t
t
NOP
Symbol
RFC
RP
XSR
REF
REFI
t
XSR
NOP
72
18
120
–
–
min.
Recommended)
- 6
Any Command
(Auto Refresh
–
–
–
64
7.8
max.
ARF
Self Refresh Entry and Exit
75
22.5
120
–
–
min.
HY[B/E]18M1G16[0/1]BF
1-Gbit DDR Mobile-RAM
NOP
t
- 7.5
RFC
–
–
–
64
7.8
max.
FIGURE 36
TABLE 14
= Don't Care
Row n
Row n
Ba A,
ACT
Unit
ns
ns
ns
ms
µs
Data Sheet
Note
1)
1)
1)
–
2)
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