m29dw256g Numonyx, m29dw256g Datasheet - Page 56

• Manufacturer Part Number: m29dw256g
• Description: 256-mbit X16, Multiple Bank, Page, Dual Boot 3 V Supply Flash Memory
• Manufacturer: Numonyx

Table 21.
1. Sampled only, not 100% tested.
Table 22.
1. The maximum input leakage current is
2. Sampled only, not 100% tested.
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Symbol
V
I
CC3
V
I
I
I
LKO
I
I
I
I
V
V
V
LI
I
CC1
CC2
V
PP1
PP2
PP3
PP4
PPH
LO
OH
OL
(1)
IH
IL
Symbol
(2)
(2)
C
C
OUT
IN
Input leakage current
Output leakage current
Read current
Supply current (standby)
Supply current (program/erase)
Program
current
(program)
Program
current (erase)
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage
Voltage for
acceleration
Program/erase lockout supply
voltage
Device capacitance
DC characteristics
Input capacitance
Output capacitance
Parameter
V
PP
/WP
Random read
Page read
Read or
standby
Reset
Program
operation
ongoing
Erase
operation
ongoing
program
Parameter
(1)
±
5 μA on the V
controller active
Program/erase
I
I
OH
OL
V
V
= 100 μA, V
= 100 μA, V
PP
PP
PP
RP = V
0 V
E = V
V
V
RP = V
E = V
E = V
/WP pin.
0 V
Test condition
V
V
V
CCQ
CCQ
/WP = VppH ± 5%
/WP = VppH ± 5%
PP
PP
PP
V
V
Test condition
f = 10 MHz
f = 6 MHz
CC
CC
/WP = V
/WP = V
V
/WP
CCQ
V
IL
IL
= V
= V
V
CCQ
V
OUT
OUT
SS
, G = V
, G = V
IN
IN
2.7 V
2.7 V
CCQ(min)
CCQ(min)
CC
CC
V
± 0.2 V,
= 0 V
± 0.2 V
= 0 V
± 0.2 V
PP
V
V
= V
V
= V
V
V
CC
CC
CC
/WP = V
CC
PP
IH
IH
IL
CC
CC(min)
CC(min)
,
,
/WP =
or V
IH
PPH
,
,
0.85V
Min
0.7V
Min
1.8
0.5
CCQ
CCQ
Typ
8.5
Max
1
1
1
1
3
1
12
6
V
0.15V
0.3V
CCQ
Max
100
9.5
2.5
±1
±1
10
20
15
10
10
1
5
5
5
5
CCQ
+0.4
CCQ
Unit
pF
pF
Unit
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μ
V
V
V
V
V
V
A