se97pw/1 NXP Semiconductors, se97pw/1 Datasheet - Page 31
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se97pw/1
Manufacturer Part Number
se97pw/1
Description
Se97 Memory Module Temp Sensor With Integrated Spd
Manufacturer
NXP Semiconductors
Datasheet
1.SE97PW1.pdf
(43 pages)
NXP Semiconductors
11. Characteristics
Table 27.
V
Table 28.
V
[1]
SE97_2
Product data sheet
Symbol
T
T
T
E
Symbol
I
I
V
V
V
V
V
I
I
I
I
I
C
I
I
Z
Z
DD(AV)
sd(VDD)
OL(sink)EVENT
OL(sink)(SDA)
LOH
LIH
LIL
L
pd
DD
DD
lim(acc)
res
conv
IL
IH
f(conv)
IH
IL
OL1
OL2
I(ov)
i(SCL/SDA)
= 3.0 V to 3.6 V; T
= 1.7 V to 3.6 V; T
High-voltage input voltage applied to pin A0 during RWP and CRWP operations.
Characteristics
DC characteristics
Parameter
temperature limit accuracy
temperature resolution
conversion period
conversion rate error
Parameter
average supply current
supply voltage shutdown mode
current
HIGH-level input voltage
LOW-level input voltage
LOW-level output voltage 1
LOW-level output voltage 2
overvoltage input voltage
LOW-level output sink current on
pin EVENT
LOW-level output sink current on
pin SDA
HIGH-level output leakage current
HIGH-level input leakage current
LOW-level input leakage current
SCL and SDA input capacitance
leakage current
pull-down current
LOW-level input impedance
HIGH-level input impedance
amb
amb
= 20 C to +125 C; unless otherwise specified.
= 20 C to +125 C; unless otherwise specified. These specifications are guaranteed by design.
Conditions
B-grade; V
C-grade; V
conversion time from STOP bit
to conversion complete
percentage error in
programmed data
T
T
Rev. 02 — 12 October 2007
amb
amb
Conditions
SMBus inactive
SMBus inactive
SCL, SDA;
V
SCL, SDA;
V
V
V
pin A0; V
V
V
EVENT; V
SDA, SCL; V
SDA, SCL; V
A0, A1, A2; V
on A0, A1, A2
internal; A0, A1, A2 pins;
V
pins A0, A1, A2; V
pins A0, A1, A2
= 20 C to +125 C
= 20 C to +125 C
DD
DD
DD
DD
OL1
OL2
I
V
V
= 0.3V
DD
DD
DD
DD
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= 3.0 V; I
= 1.7 V; I
= 0.4 V
= 0.5 V
= 3.3 V
= 3.0 V to 3.6 V
= 1.7 V
= 3.3 V
I(ov)
DD
OH
Memory module temp sensor with integrated SPD
to V
I
I
= V
I
OL
OL
= V
= V
= V
V
DD
= 3 mA
= 1.5 mA
10 %
DD
10 %
DD
DD
SS
SS
I
< 0.3V
> 4.8 V
DD
Min
-
-
[1]
1.0
2.0
30
Min
-
-
-
0.7
-
-
-
7
2
3
-
-
-
30
800
1.0
1.0
1.0
1.0
V
Typ
< 0.5
< 1
0.25
100
-
DD
Typ
250
0.1
0.1
-
-
-
-
-
-
-
-
-
-
-
5
1
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
+1.0
+2.0
-
120
30
Max
400
5.0
3
V
0.3
0.4
0.5
10
-
-
+1.0
+1.0
+1.0
+1.0
10
-
4.0
-
-
DD
+ 1
SE97
V
DD
Unit
ms
%
31 of 43
C
C
C
Unit
V
V
V
V
V
mA
mA
pF
k
k
A
A
A
A
A
A
A
A
A