uaa3535hl NXP Semiconductors, uaa3535hl Datasheet - Page 15

• Manufacturer Part Number: uaa3535hl
• Description: Low Power Gsm/dcs/pcs Multi-band Transceiver
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Feb 17
R
C
P
s
F
CP1
SPUR
P
I
K
V
R
R
LO
IM3
IM
SPUR
SPUR
RF LO buffer
RF
f
CP(max)
i(RF)
11
K
i
HASE DETECTOR
o
i
i
o
o(pd)
Low power GSM/DCS/PCS multi-band transceiver
NOISE
SYMBOL
o
o
SOURCE CONNECTED AT PIN
o
P(RFin)
L(4fm)
L(8fm)
input resistance
input capacitance
input power
input reflection coefficient
noise figure
1 dB input compression point T
power level of spurious
signals at RF input
charge pump maximum sink
or source current
phase-frequency detector
gain
phase-frequency detector
gain variation
output voltage
output resistance
output resistance power
down
local oscillator feedthrough
third-order products level
image level
phase noise output power
density
level of spurious signals at
4
level of spurious signals at
8 f
RF input frequency
;
PIN
f
mod
mod
TXCPO
PARAMETER
RFLOIA
AND
RFLOIB
single-ended
single-ended
T
LO leakage
other
GSM mode; external
resistance of 1800
for minimum output
current; TXI = 0; note 6
DCS and PCS mode;
external resistance of
1800
output current; TXI = 1;
note 6
for I
over output voltage range
TX mode disabled
note 7
offset +3
f
T
T
f
notes 7 and 8
f
V
IFLO
mod
mod
3
amb
amb
f = 400 kHz;
amb
f = 1.8 MHz;
amb
f = 20 MHz; T
o
CP
=
= 67.7 kHz;
= 67.7 kHz; note 7
67.7 kHz; note 7
= 25 C
= 25 C
= 25 C; note 7
= 25 C; note 7
CONDITIONS
V
---------------------- -
= 1 mA
67.7 kHz; note 7
CC(PHD)
1% for minimum
2
15
67.7 kHz or
amb
= 25 C
1%
1
0.5
0.4
1788
23
MIN.
50
10
2
1
0.16
10
1
20
10
20
50
40
55
45
TYP.
4
2
10
V
2002
17
45
45
32
50
37
117
117
136
50
55
Objective specification
CC(CP)
UAA3535HL
MAX.
0.4 V
pF
dBm
dB
dB
dBm
dBm
dBm
mA
mA
mA/rad
%
k
k
dBc
dBc
dBc
dBc/Hz
dBc/Hz
dBc/Hz
dBc
dBc
MHz
UNIT