uaa3535hl NXP Semiconductors, uaa3535hl Datasheet - Page 16
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uaa3535hl
Manufacturer Part Number
uaa3535hl
Description
Low Power Gsm/dcs/pcs Multi-band Transceiver
Manufacturer
NXP Semiconductors
Datasheet
1.UAA3535HL.pdf
(24 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
2000 Feb 17
R
C
s
P
RF and IF synthesizers
R
f
V
R
RF
f
f
f
f
SPUR
I
K
I
V
R
ref
RFLO
comp(RF)
comp(leak)
step(RF)
CP(nom)
L(CP)
11
K
LO
i(rms)
CP
i(dif)
i(dif)
EFERENCE INPUT
i
o
Low power GSM/DCS/PCS multi-band transceiver
noise
SYMBOL
SYNTHESIZER
P(RF)
differential input resistance
differential input capacitance
input reflection coefficient
power available from the
LO source
reference frequency
input voltage level
(RMS value)
input resistance
synthesizer frequency
comparison frequency
200 kHz comparison
frequency leakage
frequency step
programmability
close-in phase noise
power level of spurious
signals
nominal charge pump output
current
phase-frequency detector
gain
phase-frequency detector
gain variation
charge pump leakage current in off state
charge pump output voltage
output resistance
;
;
PIN
PIN
RFCPO
REFIN
PARAMETER
parallel RC input model
parallel RC input model
REFDIV = 0
REFDIV = 1
f
with recommended loop
filter
f
f > 400 kHz
sink or source
I
over V
I
SYN mode disabled;
power-down
ref
comp(RF)
CP
CP
f = 2 kHz
= 13 MHz
= 2 mA
within specified range
CONDITIONS
CP
= 200 kHz
range
16
1700
1.7
0.4
60
8
5
MIN.
50
0.2
13
26
10
200
100
2.0
0.32
1
15
5
50
80
TYP.
220
2100
2.3
10
+5
V
10
2
76
70
Objective specification
CC
UAA3535HL
MAX.
0.4
pF
dB
dBm
MHz
MHz
mV
k
MHz
kHz
dBc
kHz
dBc/Hz
dBc
mA
mA/rad
%
nA
V
k
UNIT