oq2541bhp NXP Semiconductors, oq2541bhp Datasheet - Page 32
oq2541bhp
Manufacturer Part Number
oq2541bhp
Description
Oq2541bhp; Oq2541bu Sdh/sonet Data And Clock Recovery Unit Stm1/4/16 Oc3/12/48 Ge
Manufacturer
NXP Semiconductors
Datasheet
1.OQ2541BHP.pdf
(40 pages)
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Philips Semiconductors
Table 7 Physical characteristics of bare die
Thermal considerations
To improve heat transfer away from the product, a large area fill is recommended as a die pad. The die should be
mounted on this with a heat conductive glue. All supply and ground pads must be bonded to ensure good electrical
performance; this also improves heat transfer to the die pad or other copper area fills. The more copper leading away
from the die, the better the heat transport. In turn, this copper should be able to lose its heat to the environment through
radiation, natural convection (unforced airflow over the printed-circuit board) or forced cooling.
2000 Sep 18
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attach temperature
Attach time
SDH/SONET data and clock recovery unit
STM1/4/16 OC3/12/48 GE
NAME
0.8 m silicon nitride on top of 0.9 m PSG (PhosphoSilicate Glass)
minimum dimension of exposed metallization is 90
1.8 m AlCu (1% Cu)
380 m nominal
2.360
silicon; electrically connected to V
<440 C; recommended die attach is glue
<15 s
2.360 mm (5.5696 mm
32
2
)
EE
DESCRIPTION
potential through substrate contacts
OQ2541BHP; OQ2541BU
90 m (pad size = 100
Product specification
100 m)
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