am49pdl127ah Meet Spansion Inc., am49pdl127ah Datasheet - Page 3

• Manufacturer Part Number: am49pdl127ah
• Description: Stacked Multi-chip Package Mcp Flash Memory And Psram, 128 Megabit 8m ? 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 16 Mbit 1m ? 16-bit Cmos Pseudo Static Ram
• Manufacturer: Meet Spansion Inc.

Am49PDL127AH/Am49PDL129AH
Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and
16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
MCP Features
Flash Memory Features
ARCHITECTURAL ADVANTAGES
PDL127:
PDL129:
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Power supply voltage of 2.7 to 3.3 volt
High performance
— Access time as fast as 65 ns initial / 25 ns page
Package
— 73-Ball FBGA
Operating Temperature
— –40°C to +85°C
128 Mbit Page Mode device
— Page size of 8 words: Fast page read access from random
Dual Chip Enable inputs (PDL129 only)
— Two CE# inputs control selection of each half of the memory
Single power supply operation
— Full Voltage range: 2.7 to 3.3 volt read, erase, and program
Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
— Zero latency switching from write to read operations
FlexBank Architecture
— 4 separate banks, with up to two simultaneous operations
— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank B: 48 Mbit (32 Kw x 96)
— Bank C: 48 Mbit (32 Kw x 96)
— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank 1A: 48 Mbit (32 Kw x 96)
— Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
— Bank 2B: 48 Mbit (32 Kw x 96)
SecSi
— Up to 128 words accessible through a command sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 0.13 µm process technology
20-year data retention at 125°C
ADVANCE INFORMATION
locations within the page
space
operations for battery-powered applications
executing erase/program functions in another bank
per device
TM
(Secured Silicon) Sector region
PERFORMANCE CHARACTERISTICS
SOFTWARE FEATURES
HARDWARE FEATURES
Minimum 1 million erase cycle guarantee per sector
High Performance
— Page access times as fast as 25 ns
— Random access times as fast as 65 ns
Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 25 mA program/erase current
— 1 µA typical standby mode current
Software command-set compatible with JEDEC 42.4
standard
— Backward compatible with Am29F and Am29LV families
CFI (Common Flash Interface) complaint
— Provides device-specific information to the system, allowing
Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or program
Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or erase
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array data
WP#/ACC (Write Protect/Acceleration) input
— At V
— At V
— At V
Persistent Sector Protection
— A command sector protection method to lock combinations
— Sectors can be locked and unlocked in-system at V
Password Sector Protection
— A sophisticated sector protection method to lock
host software to easily reconfigure for different Flash devices
operations in other sectors of same bank
program command sequences
cycle completion
word sectors.
setting
of individual sectors and sector groups to prevent program or
erase operations within that sector
combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using
a user-defined 64-bit password
IL
IH
HH
, hardware level protection for the first and last two 4K
, allows removal of sector protection
, provides accelerated programming in a factory
Publication Number: 30535
Issue Date: December 18, 2003
Rev: A Amendment: +1
CC
level