lrs1386 Sharp Microelectronics of the Americas, lrs1386 Datasheet - Page 21

• Manufacturer Part Number: lrs1386
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

Notes:
Symbol
1. V
2. All currents are in RMS unless otherwise noted. Typical values at nominal V
3. I
4. Block erase, full chip erase, (page buffer) program and OTP program are inhibited when F-V
5. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
6. Sampled, not 100% tested.
7. F-V
V
V
V
V
V
I
I
I
V
V
V
I
PPLK
PPH1
PPH2
SB1
CC1
CC2
LKO
SB
OH
OL
IH
IL
mode, the device’s current draw is the sum of I
guaranteed in the range between V
V
completion. Standard address access timings (t
program cannot be executed and should not be attempted.
Applying 12V ±0.3V to F-V
and supplies the memory cell current for block erasing and (page buffer) programming. Use similar power supply trace
widths and layout considerations given to the V
Applying 12V ±0.3V to F-V
F-V
CCWS
CC
PPH2
PP
PP
includes both F-V
S-V
S-V
S-V
S-V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
F-V
Operations
F-V
Erase, Word Write or Lock-Bit
configuration Operations
F-V
(max.).
is not used for power supply pin. With F-V
may be connected to 12V ±0.3V for a total of 80 hours maximum.
and I
CC
CC
CC
CC
PP
PP
CC
CCES
Lockout during Normal
during Block Erase, Full Chip
Standby Current
Standby Current
Operation Current
Operation Current
Lockout Voltage
are specified with the device de-selected. If read or (page buffer) program while in block erase suspend
Parameter
CC
and S-V
PP
PP
during erase/program can only be done for a maximum of 1000 cycles on each block.
provides fast erasing or fast programming mode. In this mode, F-V
CC
PPLK
.
DC Electrical Characteristics (Continue)
(max.) and V
Notes
4,6,7
AVQV
CCWS
6
6
6
6
7
CC
PP
L R S1 3 8 6
) provide new data when addresses are changed.
power bus.
or I
Min. Typ.
V
V
1.65
11.7
-0.2
-0.4
-0.2
V
1.5
PPH1
CC
CC
PPLK
CCES
(min.) , between V
, block erase, full chip erase, (page buffer) program and OTP
and I
12
2
3
(1)
CCR
Max.
V
+0.2
12.3
0.4
0.4
0.4
3.3
25
50
3
8
CC
or I
CCW
CC
Unit
mA S-CE
mA
mA
(T
µA
V
V
V
V
V
V
V
V
, respectively.
A
voltage and T
PPH1
= -25°C to +85°C, V
S-CE
S-CE
S-CE
S-CE
V
S-CE
S-CE
V
or
I
I
OL
OH
(max.) and V
IN
IN
= 0.5mA
= -0.5mA
= V
0.2V
1
2
2
1
2
1
, S-CE
S-V
= V
= V
= V
IL
0.2V
S-V
A
0.2V,
CC
IL
IL
IH
or V
=+25 C.
,
2
CC
Conditions
-0.2V
PPH2
IH
PP
PP
-0.2V,
S-V
is power supply pin
CC
(min.) and above
CC
V
= 2.7V to 3.3V)
t
I
t
I
PPLK
- 0.2V or
CYCLE
CYCLE
I/O
I/O
= 0mA
= 0mA
, and not
= Min
= 1µA
19