lrs1386 Sharp Microelectronics of the Americas, lrs1386 Datasheet - Page 30
![no-image](/images/no-image-200.jpg)
lrs1386
Manufacturer Part Number
lrs1386
Description
Flash Memory
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1386.pdf
(114 pages)
- Current page: 30 of 114
- Download datasheet (4Mb)
13.3 Write Cycle
Note:
Symbol
1. Active output to High-Z and High-Z to output active tests specified for a ±200mV transition from steady state levels into
t
t
t
t
t
t
t
t
t
t
t
WC
CW
BW
WR
DW
OW
AW
WP
WZ
DH
AS
the test load.
Write cycle time
Chip enable to end of write
Address valid to end of write
Byte select time
Address setup time
Write pulse width
Write recovery time
Input data setup time
Input data hold time
S-WE High to output active
S-WE Low to output in High-Z
Parameter
L R S1 3 8 6
(T
A
= -25°C to +85°C, S-V
Notes
1
1
Min.
85
70
70
70
60
35
0
0
0
5
0
Max.
CC
25
= 2.7V to 3.3V)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
28
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