lrs1805a Sharp Microelectronics of the Americas, lrs1805a Datasheet - Page 24

• Manufacturer Part Number: lrs1805a
• Description: Stacked Chip Flash Memory Smartcombo
• Manufacturer: Sharp Microelectronics of the Americas

sharp
12.4 Block Erase, Full Chip Erase, (Page Buffer) Program Performance
Notes:
t
t
t
t
t
Symbol
WHQV1
t
WHQV2
t
WHQV3
t
WHRH1
t
WHRH2
t
1. Typical values measured at F-V
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
4. A latency time is required from writing suspend command (F-WE or F-CE going high) until SR.7 going “1”or F-RY/BY
5. If the interval time from a Block Erase Resume command to a subsequent Block Erase Suspend command is shorter than
EHQV1
EHQV2
EHQV3
t
EHRH1
EHRH2
t
t
WMB
ERES
WPB
set. Subject to change based on device characterization.
going High-Z.
t
ERES
/
/
/
/
/
4K-Word Parameter Block
Program Time
32K-Word Main Block
Program Time
Word Program Time
4K-Word Parameter Block
Erase Time
32K-Word Main Block
Erase Time
Full Chip Erase Time
(Page Buffer) Program Suspend
Latency Time to Read
Block Erase Suspend
Latency Time to Read
Latency Time from Block Erase
Resume Command to Block
Erase Suspend Command
and its sequence is repeated, the block erase operation may not be finished.
Parameter
CC
=3.0V, F-V
Notes
2
2
2
2
2
2
2
2
2
4
4
5
PP
Page Buffer
Command
is Used or
Not Used
Not Used
Not Used
=3.0V or 12V, and T
not Used
L R S 1 8 0 5 A
Used
Used
Used
-
-
-
-
-
Min.
500
(3)
F-V
(In System)
A
Typ.
PP
=+25 C. Assumes corresponding lock bits are not
0.05
0.03
0.38
0.24
0.3
0.6
11
80
=V
7
5
5
(T
(1)
PPH1
A
= -25°C to +85°C, F-V
Max.
0.12
200
100
700
0.3
2.4
10
20
1
4
5
(2)
Min.
500
(In Manufacturing)
F-V
Typ.
PP
0.04
0.02
0.31
0.17
0.2
0.5
=V
9
5
5
5
(1)
CC
PPH2
= 2.7V to 3.3V)
Max.
0.12
0.06
185
0.5
90
10
20
1
4
5
(2)
Unit
s
s
s
s
s
s
s
s
s
s
s
s
22