lrs1805a Sharp Microelectronics of the Americas, lrs1805a Datasheet - Page 29
![no-image](/images/no-image-200.jpg)
lrs1805a
Manufacturer Part Number
lrs1805a
Description
Stacked Chip Flash Memory Smartcombo
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1805A.pdf
(57 pages)
- Current page: 29 of 57
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13. AC Electrical Characteristic for Smartcombo RAM
13.1 AC Test Conditions
Note:
13.2 Read Cycle
Notes:
It is possible to control data width by S-LB and S-UB pins.
Input pulse level
Input rise and fall time
Input and Output timing Ref. level
Output load
Symbol
1. Including scope and socket capacitance.
1. Reading data from lower byte
2. Reading data from upper byte
3. Reading data from both bytes
t
t
t
t
t
t
t
t
t
t
t
AHC
t
t
ACE
t
t
ASC
CHZ
BHZ
OLZ
OHZ
C1H
CLZ
BLZ
RC
AA
OE
BE
OH
Data can be read when the address is set while holding S-CE
S-LB = Low.
Data can be read when the address is set while holding S-CE
S-UB = Low.
Data can be read when the address is set while holding S-CE
S-LB = Low and S-UB = Low.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Byte Enable Access Time
Address Setup to S-CE
Address Hold to S-CE
S-CE
S-CE
S-CE
S-UB or S-LB Low to Output Active
S-UB or S-LB High to Output in High-Z
S-OE Low to Output Active
S-OE High to Output in High-Z
Output Hold from Address Change
1
1
1
(1,2,3)
High Pulse Width
Low to Output Active
High to Output in High-Z
1
1
High
Low
Parameter
L R S 1 8 0 5 A
0.3 V to V
1TTL +C
1
1
1
= Low, S-CE
= Low, S-CE
= Low, S-CE
1/2 V
3 ns
L
CC
(50pF)
CC
- 0.3 V
2
2
2
(T
(1)
= High, S-OE = Low, S-WE = High and
= High, S-OE = Low, S-WE = High and
= High, S-OE = Low, S-WE = High,
A
= -25°C to +85°C, S-V
Notes
Min.
85
30
0
0
0
0
0
5
32,000
CC
Max.
85
85
40
40
30
30
30
= 2.7V to 3.1V)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
27
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