k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 13

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k4t1g084qe

Manufacturer Part Number
k4t1g084qe
Description
1gb E-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K4T1G084QE
K4T1G164QE
7.2 Operating Temperature Condition
7.3 Input DC Logic Level
7.4 Input AC Logic Level
Note :
1. For information related to V
7.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
K4T1G044QE
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
tude allowed for overshoot and undershoot.
max for falling edges as shown in the below figure.
transitions.
V
JESD51.2 standard.
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
SWING(MAX)
Symbol
SLEW
Symbol
V
Symbol
V
V
T
REF
IH
IL
OPER
Symbol
V
V
(DC)
(DC)
IH
IL
(AC)
(AC)
DC input logic high
DC input logic low
PEAK
Parameter
Input signal maximum peak to peak swing
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
AC input logic high
AC input logic low
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Parameter
Input reference voltage
Parameter
delta TF
Condition
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
IL
+ 0.125
(AC)max
IL
13 of 45
V
V
(AC) to V
SSQ
REF
Min.
+ 0.200
- V
PEAK
IH
delta TR
IH/IL
DDR2-667, DDR2-800
REF
(AC) on the positive transitions and V
V
V
Rising Slew =
(AC) level applied to the device under test.
REF
DDQ
to V
Max.
Rating
0 to 95
- 0.125
IH
+ 0.3
(AC) min for rising edges and the range from V
0.5 * V
Value
1.0
1.0
V
DDQ
V
V
IH
DDQ
REF
(AC)min - V
V
V
V
V
V
V
V
delta TR
Max.
DDQ
IH
IH
REF
IL
IL
SS
+ V
- 0.200
(DC)max
(AC)max
(AC)min
(DC)min
PEAK
Units
REF
Units
V
V
Rev. 1.1 December 2008
°C
Units
V/ns
IH
V
V
(AC) to V
DDR2 SDRAM
IL
(AC) on the negative
Units
Notes
V
V
Notes
1, 2
REF
Notes
2, 3
1
1
to V
IL
(AC)

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