k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 15

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

9.0 OCD default characteristics
K4T1G084QE
K4T1G164QE
Note :
1. Absolute Specifications (0°C ≤ T
2. Impedance measurement condition for output source DC current: V
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
K4T1G044QE
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
values of V
V
guaranteed by design and characterization.
OUT
/Iol must be less than 23.4 ohms for values of V
OUT
between V
Description
DDQ
IL
(AC) to V
and V
CASE
DDQ
≤ +95°C; V
IH
(AC).
- 280mV. Impedance measurement condition for output sink dc current: V
Output
(V
DD
OUT
Parameter
= +1.8V ±0.1V, V
OUT
)
Sout
between 0V and 280mV.
15 of 45
V
DDQ
TT
DDQ
See full strength default driver characteristics
25 ohm
= 1.7V; V
Min
1.5
= +1.8V ±0.1V)
0
0
on device operation specification
18ohm at norminal condition
OUT
Reference
Point
= 1420mV; (V
Nom
OUT
-V
DDQ
)/Ioh must be less than 23.4 ohms for
Max
1.5
Rev. 1.1 December 2008
4
5
DDQ
= 1.7V; V
DDR2 SDRAM
V/ns
Unit
ohm
ohm
ohm
OUT
= 280mV;
1,4,5,6,7,8
Notes
1,2,3
1,2
6