k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 21

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
Parameter
Four Activate Window for 1KB page size products
Four Activate Window for 2KB page size products
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any command
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width (HIGH and LOW pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE asynchronously
drops LOW
Symbol
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tCKE
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
tOIT
tDelay
21 of 45
tIS+tCK(avg)
tAC(min)+2
tAC(min)+2
WR + tnRP
tRFC + 10
tAC(min)
tAC(min)
8 - AL
min
+tIH
200
7.5
7.5
2.5
35
45
15
2
3
2
3
8
0
2
2
DDR2-800
2.5*tCK(avg)+
tAC(max)+0.7
tAC(max)+0.6
+tAC(max)+1
tAC(max)+1
2*tCK(avg)
max
2.5
12
x
x
x
x
x
x
x
x
x
x
x
x
x
2
x
x
x
tIS+tCK(avg)
WR + tnRP
tAC(min)+2
tAC(min)+2
tRFC + 10
tAC(min)
tAC(min)
7 - AL
min
37.5
+tIH
200
7.5
7.5
2.5
50
15
2
3
2
3
8
0
2
2
DDR2-667
2.5*tCK(avg)+
tAC(max)+0.7
tAC(max)+0.6
+tAC(max)+1
tAC(max)+1
Rev. 1.1 December 2008
2*tCK(avg)
max
2.5
12
x
x
x
x
x
x
x
x
x
x
x
x
x
2
x
x
x
DDR2 SDRAM
Units
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17,43,45
6,16,40
Notes
24,32
17,45
3,32
1,2
32
32
32
33
32
27
16
32
15
1