k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 16

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

10.0 IDD Specification Parameters and Test Conditions
K4T1G084QE
K4T1G164QE
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
K4T1G044QE
Symbol
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3P
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
Operating one bank active-precharge current;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern
is same as IDD4W
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
Precharge quiet standby current;
All banks idle; tCK = t CK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data
bus inputs are FLOATING
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
inputs are STABLE; Data bus inputs are FLOATING
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRAS-
max(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCH-
ING; Data pattern is same as IDD4W
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid com-
mands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
Self refresh current;
CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC
= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-
lowing page for detailed timing conditions
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands;
Proposed Conditions
16 of 45
Fast PDN Exit MRS(12) = 0
Slow PDN Exit MRS(12) = 1
Normal
Low Power
Rev. 1.1 December 2008
DDR2 SDRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes