k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 26

no-image

k4t1g084qe

Manufacturer Part Number
k4t1g084qe
Description
1gb E-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
k4t1g084qe-BCE6
Manufacturer:
SAMSUNG
Quantity:
10 000
Part Number:
k4t1g084qe-BCF7
Manufacturer:
SAMSUNG
Quantity:
4 000
Part Number:
k4t1g084qe-HCE6
Manufacturer:
SAMSUNG
Quantity:
2 944
Part Number:
k4t1g084qe-HCE6
Manufacturer:
SAMSUNG
Quantity:
4 000
Part Number:
k4t1g084qe-HCE6
Manufacturer:
SAMSUNG
Quantity:
1 000
Part Number:
k4t1g084qe-HCE6
Manufacturer:
SAMSUNG
Quantity:
8 000
Part Number:
k4t1g084qe-HCE7
Manufacturer:
TI
Quantity:
23
Part Number:
k4t1g084qe-HCE7
Manufacturer:
SEC
Quantity:
1 000
Part Number:
k4t1g084qe-HCE7
Manufacturer:
SAMSUNG
Quantity:
8 000
K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC)max
Figure 5 - IIIustration of nominal slew rate for tDS (differential DQS,DQS)
(AC)max
(DC)min
(AC)min
(DC)
DQS
DQS
V
SS
V
region
REF
=
to ac
V
∆TF
REF
(DC) - V
∆TF
nominal slew
tDS
IL
rate
tVAC
(AC)max
26 of 45
tDH
Setup Slew Rate
Rising Signal
∆TR
nominal
slew rate
tDS
=
V
IH
(AC)min - V
tDH
V
∆TR
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM

Related parts for k4t1g084qe