k4d261638k Samsung Semiconductor, Inc., k4d261638k Datasheet - Page 14

• Manufacturer Part Number: k4d261638k
• Description: 128mbit Gddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS (II)_Continued
Note :
1. For normal write operation, even numbers of Din are to be written inside DRAM.
2. tRCDWR should be always greater or equal to 2tCK.
AC CHARACTERISTICS (III)_Continued
K4D261638K
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge @Normal Precharge
Last data in to Row precharge @Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
Power down exit time
Refresh interval time
K4D261638K-LC40
K4D261638K-LC50
250MHz ( 4.0ns )
200MHz ( 5.0ns )
133MHz ( 7.5ns )
200MHz ( 5.0ns )
133MHz ( 7.5ns )
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
3 or 2
3 or 2
3
3
3
tRC
tRC
13
11
11
7
8
tRFC
tRFC
15
14
14
10
8
tRCDWR
tRCDRD
Symbol
tWR_A
tCDLR
tPDEX
tRRD
tCCD
tMRD
tRFC
tRAS
tXSR
tDAL
tREF
tWR
tRC
tRP
tRAS
tRAS
- 14 /19 -
5
6
9
8
8
3tCK+tIS
tRCDRD tRCDWR
tRCDRD tRCDWR
Min
200
52
60
36
16
16
12
8
3
1
3
2
2
7
-
4
3
3
3
2
-40
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
2
2
2
2
3tCK+tIS
128M GDDR SDRAM
tRP
tRP
Min
200
4
3
3
3
2
55
70
40
15
10
15
10
3
3
2
1
2
6
-
-50
tRRD
tRRD
Rev. 1.3 July 2007
3
2
2
2
2
100K
Max
7.8
-
-
-
-
-
-
-
-
-
-
-
-
(Unit : Number of Clock)
tDAL
tDAL
4
4
Unit
7
6
6
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
us
Note
Unit
Unit
tCK
tCK
tCK
tCK
tCK
1
2
1
1