m391t5663qz3 Samsung Semiconductor, Inc., m391t5663qz3 Datasheet - Page 19

• Manufacturer Part Number: m391t5663qz3
• Description: Ddr2 Unbuffered Sdram Module
• Manufacturer: Samsung Semiconductor, Inc.

14.1 Refresh Parameters by Device Density
14.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
14.0 Electrical Characteristics & AC Timing for DDR2-800/667
UDIMM
Refresh to active/Refresh command time
Average periodic refresh interval
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
tRCD
tRP
tRC
tRAS
13.0 Input/Output Capacitance
Note : DM is internally loaded to match DQ and DQS identically.
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Bin
(0 °C < T
(CL - tRCD - tRP)
Parameter
Speed
Parameter
OPER
Parameter
Non-ECC
ECC
< 95 °C; V
DDQ
3.75
12.5
12.5
57.5
min
2.5
45
5
-
DDR2-800(E7)
= 1.8V + 0.1V; V
5 - 5 - 5
tRFC
tREFI
CCK0
CCK1
CCK2
CI1
CI2
CIO
CCK0
CCK1
CCK2
CI
CI
CIO
70000
max
Symbol
1
2
8
8
8
-
-
-
-
85 °C < T
DD
0 °C ≤ T
Symbol
= 1.8V + 0.1V)
M378T2863QZ(H)S
M391T2863QZ(H)3
CASE
CASE
Min
19 of 25
-
-
-
-
-
-
-
-
-
-
-
-
3.75
min
2.5
15
15
60
45
3
-
≤ 85°C
DDR2-800(F7)
≤ 95°C
6 - 6- 6
Max
24
25
25
42
42
25
25
25
44
44
6
6
70000
max
256Mb
8
8
8
-
-
-
-
7.8
3.9
75
M378T5663QZ(H)3
M391T5663QZ(H)3
Min
-
-
-
-
-
-
-
-
-
-
-
-
512Mb
105
7.8
3.9
3.75
min
15
15
60
45
5
3
-
DDR2-667(E6)
Max
26
28
28
42
42
10
28
28
28
44
44
10
5 - 5 - 5
127.5
1Gb
(V
7.8
3.9
DD
=1.8V, V
M378T6464QZ(H)3
DDR2 SDRAM
70000
max
Min
Rev. 1.2 July 2008
8
8
8
-
-
-
-
-
-
-
-
-
-
2Gb
195
7.8
3.9
DDQ
327.5
=1.8V, TA=25
4Gb
Max
7.8
3.9
22
24
24
34
34
6
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
Units
ns
µs
µs
pF
pF
o
C)