m391t5663qz3 Samsung Semiconductor, Inc., m391t5663qz3 Datasheet - Page 4

• Manufacturer Part Number: m391t5663qz3
• Description: Ddr2 Unbuffered Sdram Module
• Manufacturer: Samsung Semiconductor, Inc.

UDIMM
1.0 DDR2 Unbuffered DIMM Ordering Information
Note :
1. “Z” of Part number(12th digit) stands for Lead-Free and RoHS compliant products.
2. “H” of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products.
3. “3” of Part number(13th digit) stands for Dummy Pad PCB products.
2.0 Features
3.0 Address Configuration
• Performance range
• JEDEC standard V
• V
• 333MHz f
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1 , 2 , 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/Nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• Average Refresh Period 7.8us at lower than a T
• Package: 60ball FBGA - 128Mx8 and 84ball FBGA - 64Mx16
• All of base components are Lead-Free, Halogen-Free, and RoHS compliant
CL-tRCD-tRP
Speed@CL3
Speed@CL4
Speed@CL5
Speed@CL6
-
M378T2863QZ(H)S-CE7/F7/E6
M378T5663QZ(H)3-CE7/F7/E6
M378T6464QZ(H)3-CE7/F7/E6
M391T2863QZ(H)3-CE7/F7/E6
M391T5663QZ(H)3-CE7/F7/E6
DDQ
Support High Temperature Self-Refresh rate enable feature
128Mx8(1Gb) based Module
64Mx16(1Gb) based Module
= 1.8V ± 0.1V
Part Number
Organization
CK
for 667Mb/sec/pin, 400MHz f
DD
E7 (DDR2-800)
= 1.8V ± 0.1V Power Supply
5-5-5
400
533
800
-
Density
512MB
1GB
2GB
1GB
2GB
Row Address
CK
A0-A13
A0-A12
F7 (DDR2-800)
for 800Mb/sec/pin
CASE
Organization
6-6-6
533
667
800
128Mx64
256Mx64
128Mx72
256Mx72
64Mx64
-
85°C, 3.9us at 85°C < T
x64 Non ECC
x72 ECC
4 of 25
Column Address
A0-A9
A0-A9
128Mx8(K4T1G084QQ)*16
128Mx8(K4T1G084QQ)*18
Component Composition
64Mx16(K4T1G164QQ)*4
128Mx8(K4T1G084QQ)*9
128Mx8(K4T1G084QQ)*8
E6 (DDR2-667)
5-5-5
400
533
667
-
CASE
< 95 °C
Bank Address
BA0-BA2
BA0-BA2
Mbps
Mbps
Mbps
Mbps
Unit
CK
Number of Rank
DDR2 SDRAM
Rev. 1.2 July 2008
1
2
1
1
2
Auto Precharge
A10
A10
Height
30mm
30mm
30mm
30mm
30mm