k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 33
k4r881869m
Manufacturer Part Number
k4r881869m
Description
288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4R881869M.pdf
(64 pages)
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K4R881869M
SA11..SA0
044
045
046
047
048
049
04a
04c
04b
04d
04e
04f
080
16-
16
16
16
16
16
16
16
16
16
16-
16-
16
- 0ff
16
Register
CCB
NAPX
PDNXA
PDNX
TPARM
TFRM
TCDLY1
TCYCLE
SKIP
TEST77
TEST78
TEST79
reserved
Field
CCB
ASYMB
NAPXA
NAPX
DQS
PDNXA
PDNX
TCAS
TCLS
TCDLY0
TFRM
TCDLY1
TCYCLE
AS
MSE
MS
TEST77
TEST78
TEST79
reserved
read-write/ read-only
read-write, 7 bits
read-write, 2 bits
read-write, 5 bits
read-write, 5 bits
read-write, 1 bits
read-write, 13 bits
read-write, 13 bits
read-write, 2 bits
read-write, 2 bits
read-write, 3 bits
read-write, 4 bits
read-write, 3 bits
read-write, 14 bits
read-only, 1 bit
read-write, 1 bit
read-write, 1 bit
read-write, 16 bits
read-write, 16 bits
read-write, 16 bits
vendor-specific
Table 16: Control Register Summary
Description
Current control B. Controls I
Asymmetry control. Controls asymmetry of V
NAP exit. Specifies length of NAP exit phase A.
NAP exit. Specifies length of NAP exit phase A + phase B.
DQ select. Selects CMD framing for NAP/PDN exit.
PDN exit. Specifies length of PDN exit phase A.
PDN exit. Specifies length of PDN exit phase A + phase B.
t
t
t
t
t
t
Autoskip value established by the SETF command.
Manual skip enable. Allows the MS value to override the AS value.
Manual skip value.
Test register. Write with zero after SIO reset.
Test register. Do not read or write after SIO reset.
Test register. Do not read or write after SIO reset.
Vendor-specific test registers. Do not read or write after SIO reset.
Page 31
CAS-C
CLS-C
CDLY0-C
FRM-C
CDLY1-C
CYCLE
core parameter. Determines t
core parameter. Determines t
core parameter. Determines ROW-COL packet framing interval.
datasheet parameter. Specifies cycle time in 64ps units.
core parameter. Programmable delay for read data.
core parameter. Programmable delay for read data.
OL
output current for DQB.
CAC
OFFP
and t
datasheet parameter.
Preliminary
OFFP
Direct RDRAM
Rev. 0.9 Jan. 2000
OL
/V
parameters.
OH
swing for DQB.
™
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