k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 54

• Manufacturer Part Number: k4r881869m
• Description: 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

K4R881869M
CMOS - Transmit Timing
Figure 58 is a timing diagram which shows the detailed
requirements for the CMOS output signals. The SIO0 signal
is driven once per t
SCK
SIO0
SIO0
SIO1
or
SIO1
SIO0
or
t
t
CYCLE1
QF1
DF1
t
t
Q1,MAX
QF1
interval on the falling edge. The
Figure 58: CMOS Timing - Data Signals for Transmit
t
PROP1,MAX
Page 52
clock-to-output window is t
SIO0 timing points are measured at the 50% level. The rise
and fall times of SIO0 are t
20% and 80% levels.
t
PROP1,MIN
t
Q1,MIN
QR1
Q1,MIN
Preliminary
Direct RDRAM
Rev. 0.9 Jan. 2000
and t
t
t
QR1
DR1
/t
Q1,MAX.
QF1
t
QR1
, measured at the
The SCK and
V
V
V
V
V
V
V
V
OH,CMOS
OH,CMOS
OL,CMOS
OL,CMOS
IH,CMOS
IH,CMOS
IL,CMOS
IL,CMOS
80%
50%
20%
80%
50%
20%
80%
50%
20%
80%
50%
20%
™