k4r881869m Samsung Semiconductor, Inc., k4r881869m Datasheet - Page 4

• Manufacturer Part Number: k4r881869m
• Description: 288mbit Rdram 512k X 18 Bit X 2*16 Dependent Banks Direct Rdramtm
• Manufacturer: Samsung Semiconductor, Inc.

ROW
COL
K4R881869M
Pinouts and Definitions
Center-Bonded Devices - Preliminary
These tables shows the pin assignments of the center-bonded
RDRAM package. The mechanical dimensions of this
10
9
8
7
6
5
4
3
2
1
The pin #1(ROW 1, COL A) is located at the
A1 position on the top side and the A1 position
is marked by the marker
GND
GND
V
V
A
DD
DD
DQA8
GND
GND
K4R88xx69A-Nxxx
V
V
V
B
DD
DD
DD
SAMSUNG
DQA7
DQA6
GND
CMD
GND
SCK
C
V
DQA5
DQA4
“
V
CMOS
D
DD
“
.
DQA3
DQA2
GND
GND
GND
V
E
DD
001
Table 1: Center-Bonded Device (top view)
GNDa
DQA1
DQA0
GND
V
V
F
DD
DD
CTMN
GNDa
CFM
GND
GND
V
G
DD
CFMN
CTM
V
V
H
DDa
DD
Page 2
RQ7
RQ6
V
V
REF
J
DD
package are shown in a later section. Refer to Section
“Center-Bonded uBGA Package” on page 58. Note - pin #1
is at the A1 position. .
GND
GND
RQ5
RQ4
K
GND
RQ3
RQ2
V
L
DD
GND
GND
RQ1
RQ0
V
V
M
DD
DD
DQB1
DQB0
GND
GND
V
V
N
DD
DD
Top View
Chip
Preliminary
Direct RDRAM
DQB3
DQB2
Rev. 0.9 Jan. 2000
GND
GND
V
V
P
DD
DD
DQB5
DQB4
GND
SIO0
R
V
DQB7
DQB6
GND
SIO1
GND
CMOS
S
DQB8
GND
GND
V
V
V
T
DD
DD
DD
™
GND
GND
V
V
U
DD
DD