tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet - Page 3

• Manufacturer Part Number: tpca8012-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
rg
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 40 A, V
(Ta = 25°C)
= ±20 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
= 10 μs
GS
GS
GS
DS
= 1 mA
= 20 A
= 20 A
= 20 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 20A
DD
D
∼ − 15 V
D
D
= 40 A
= 40 A
= 40 A
V
OUT
Min
Min
1.5
30
15
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2900
Typ.
10.5
11.0
Typ.
103
170
628
5.1
3.7
1.0
4.2
8.3
6.0
14
42
42
22
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8012-H
2007-12-26
3713
±100
−1.2
Max
Max
255
120
2.5
6.8
4.9
1.5
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
Ω
ns
V
V
S
A
V