tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet - Page 6

• Manufacturer Part Number: tpca8012-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
2.5
1.5
0.5
0.1
10
1
3
2
0
1
0.1
0
* Single nonrepetitive pulse
I D max (Pulse) *
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
(1)
(2)
Drain−source voltage V
Ambient temperature Ta (°C)
40
Safe operating area
1000
0.01
1
100
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
0.1
0.0001
10
t = 10 ms
1
t =10s
P
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Ta = 25°C
D
80
– Ta
0.001
V DSS max
10
t = 1 ms
DS
120
(V)
0.01
160
100
Pulse width t
0.1
r
6
th
– t
w
w
1
50
40
30
20
10
(s)
0
0
10
Case temperature Tc (°C)
40
Single pulse
100
P
D
80
– Tc
(2)
(1)
(3)
1000
120
TPCA8012-H
2007-12-26
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