tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet - Page 4

• Manufacturer Part Number: tpca8012-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
100
0.1
80
60
40
20
10
50
40
30
20
10
0
1
0
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
8
Gate−source voltage V
Drain−source voltage V
6
0.2
5
1
Drain current I
4
1
4.5
Ta = −55°C
3.8
0.4
⎪Y
I
I
D
D
fs
– V
– V
⎪ – I
2
3.6
DS
GS
25
0.6
D
D
100
10
25
GS
100
(A)
DS
3.5
Common source
Ta = 25°C
Pulse test
3
V GS = 2.8 V
0.8
Ta = −55°C
(V)
(V)
3.4
3.3
3.2
3
100
1.0
4
4
100
100
0.5
0.4
0.3
0.2
0.1
80
60
40
20
10
0
0
1
0.1
0
0
8
10
Common source
Ta = 25°C
Pulse test
6
5
4.5
Gate−source voltage V
Drain−source voltage V
4
1
5
Drain current I
1
R
V GS = 10 V
V
DS (ON)
2
I
DS
D
4.5 V
– V
10
– V
3.8
DS
GS
– I
I D = 40 A
3
D
D
20
10
10
GS
Common source
Ta = 25°C
Pulse test
(A)
DS
Common source
Ta = 25°C
Pulse test
15
TPCA8012-H
4
(V)
V GS = 3 V
(V)
3.6
2007-12-26
3.4
3.2
100
20
5