tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet - Page 5

• Manufacturer Part Number: tpca8012-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
40
30
20
10
10
0
−80
8
6
4
2
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V DS
Common source
I D = 40 A
Ta = 25°C
Pulse test
V GS = 4.5 V
V GS = 10 V
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Total gate charge Q
Dynamic input/output
Capacitance – V
1
0
characteristics
R
20
DS (ON)
I D = 10 A ,20A ,40 A
40
– Ta
I D = 10 A ,20A ,40 A
10
80
g
DS
V DD = 24 V
DS
6
(nC)
40
(V)
120
C oss
C rss
12
C iss
100
160
16
12
8
4
0
5
1000
100
2.5
1.5
0.5
0.1
10
3
2
1
0
−80
1
0
Common source
V DS = 10V
I D = 1mA
Pulse test
Common source
Ta = 25°C
Pulse test
0.2
−40
Drain−source voltage V
Ambient temperature Ta (°C)
10
0.4
5
0
I
DR
1
V
th
3
0.6
– V
40
– Ta
DS
V GS = 0 V
0.8
80
DS
TPCA8012-H
120
(V)
1.0
2007-12-26
160
1.2