k7r643684m-fi300 Samsung Semiconductor, Inc., k7r643684m-fi300 Datasheet - Page 10

• Manufacturer Part Number: k7r643684m-fi300
• Description: 2mx36-bit, 4mx18-bit Qdrtm Ii B4 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7R643684M
K7R641884M
ABSOLUTE MAXIMUM RATINGS*
*Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating
OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Notes: 1. Minimum cycle. I
Input Leakage Current
Output Leakage Current
Operating Current (x36):
QDR mode
Operating Current (x18):
QDR mode
Standby Current (NOP):
QDR mode
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Input Low Voltage
Input High Voltage
Voltage on V
Voltage on V
Voltage on Input Pin Relative to V
Storage Temperature
Operating Temperature (Commercial / Industrial)
Storage Temperature Range Under Bias
Supply Voltage
Reference Voltage
2. V
2. |I
3. Minimum Impedance Mode when ZQ pin is connected to V
4. Operating current is calculated with 50% read cycles and 50% write cycles.
5. Standby Current is only after all pending read and write burst operations are completed.
6. Programmable Impedance Mode.
7. These are DC test criteria. DC design criteria is V
8. V
9. V
only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DDQ
timing parameters.
OH
IL
IH
PARAMETER
(Min.) DC=
|=(V
(Max)DC=
must not exceed V
DD
DDQ
PARAMETER
DDQ
Supply Relative to V
Supply Relative to V
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω. |I
V
-
0.3V, V
DDQ
OUT
PARAMETER
+0.3, V
=0mA.
IL
DD
(Min.) AC=-1.5V(pulse width ≤ 3ns).
during normal operation.
IH
SS
(Max)AC=
SS
SYMBOL
SS
(0°C ≤ T
V
V
V
V
I
I
I
V
I
V
SB1
I
CC
CC
OH1
OH2
OL
OL1
OL2
IL
IH
IL
V
DDQ
V
Output Disabled,
V
Cycle Time ≥ t
V
Cycle Time ≥ t
Device deselected,
I
All Inputs
I
I
A
+0.85V(pulse width ≤ 3ns).
OUT
OH
OL
DD
DD
DD
≤ 70°C)
=1.0mA
=-1.0mA
REF
=Max; V
=Max, I
=Max, I
=0mA, f=Max.,
SYMBOL
±50mV. The AC V
(V
OL
V
V
V
DDQ
TEST CONDITIONS
REF
|=(V
≤
DD
DD
0.2V or ≥ V
DDQ
OUT
OUT
=1.8V ±0.1V, T
IN
DDQ
=V
KHKH
KHKH
.
=0mA
=0mA
- 10 -
/2)/(RQ/5)±15% for 175Ω ≤ RQ ≤ 350Ω.
SS
2Mx36 & 4Mx18 QDR
Min.
Min.
to V
SYMBOL
DD
IH
V
/V
T
T
T
DDQ
-0.2V
V
V
DDQ
OPR
BIAS
STG
IL
DD
IN
levels are defined separately for measuring
A
=0°C to +70°C)
0.68
MIN
1.7
1.4
-30
-25
-20
-16
-30
-25
-20
-16
-30
-25
-20
-16
V
V
DDQ
DDQ
V
V
DDQ
REF
0 to 70 / -40 to 85
MIN
V
-0.3
-0.5 to V
-2
-2
/2-0.12 V
/2-0.12 V
-
-
-
-
-
-
-
-
-
-
-
-
SS
+0.1
-0.5 to V
-0.5 to 2.9
-65 to 150
-0.2
-10 to 85
RATING
Rev. 1.3 March 2007
MAX
0.95
1.9
1.9
DD+
DD
DDQ
DDQ
V
V
0.3
DDQ
REF
V
MAX
950
850
750
700
900
800
700
650
400
380
360
340
TM
0.2
+2
+2
/2+0.12
/2+0.12
DDQ
+0.3
-0.1
II b4 SRAM
UNIT NOTES
mA
mA
mA
µA
µA
V
V
V
V
V
V
UNIT
UNIT
V
V
V
°C
°C
°C
V
V
V
1,4
1,4
1,5
2,6
2,6
7,8
7,9
3
3