k7r643684m-fi300 Samsung Semiconductor, Inc., k7r643684m-fi300 Datasheet - Page 2
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k7r643684m-fi300
Manufacturer Part Number
k7r643684m-fi300
Description
2mx36-bit, 4mx18-bit Qdrtm Ii B4 Sram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K7R643684M-FI300.pdf
(19 pages)
K7R643684M
K7R641884M
Document Title
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
2Mx36-bit, 4Mx18-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1.0
1.1
1.2
1.3
History
1. Initial document.
1. Update AC timing characteristics.
2. Change the JTAG instruction coding.
1. Change the AC timing characteristics. (-25/-20 parts)
2. Correct the overshoot and undershoot timing diagrams.
3. Change the JTAG Block diagrams.
4. Update the Boundary scan exit order.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the t
1. Add the Power-on Sequence specification
1. Correct the pin name table
1. Update the power consumption (Icc & Isb)
1. Finalize the datasheet
1. Add Pb-free comment
2. Change the Max. clock cycle time in AC TIMING CHARACTERIS-
TICS
1. Correct the pin name table
1. Add Detail Specification of Power up Sequence
TM
II b4 SRAM
- 2 -
2Mx36 & 4Mx18 QDR
KHKH
Max value)
Sep. 14, 2002
Oct. 24, 2002
Feb. 18, 2003
Mar. 20, 2003
Aug. 16, 2004
Oct. 18, 2004
May. 17, 2005
Aug. 2, 2005
Jul. 6, 2006
Jan. 23, 2007
Mar. 5, 2007
Draft Date
Rev. 1.3 March 2007
TM
II b4 SRAM
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
Remark