m5m4v4s40ctp-12 Mitsumi Electronics, Corp., m5m4v4s40ctp-12 Datasheet - Page 28

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m5m4v4s40ctp-12

Manufacturer Part Number
m5m4v4s40ctp-12
Description
2-bank 131072-word 16-bit Synchronous Dram
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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SDRAM (Rev. 0.3)
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)
NOTES:
1. Icc (max) is specified at the output open condition.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = VddQ = 3.3 ± 0.3v, Vss = VssQ = 0v, unless otherwise noted)
Feb ‘97 Preliminary
Symbol
Icc1d*1 operating current, dual bank
VOH (DC) High-Level Output Voltage (DC)
Icc1s*1 operating current, single bank tRC=min, tCLK=min, BL=1, CL=3
VOL (DC) Low-Level Output Voltage (DC)
Icc4*1
Icc2h
Symbol
Icc2l
Icc3
Icc5
Icc6
IOZ
I
I
standby current, CKE=H
standby current, CKE=L
active standby current
burst current
auto-refresh current
self-refresh current
Off-state Output Current
Input Current
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
Parameter
Parameter
MITSUBISHI ELECTRIC
tRC=min, tCLK=min, BL=1, CL=3
both banks idle, tCLK=min, CKE=H
both banks idle, tCLK=min, CKE=L
tCLK=min, BL=4, CL=3, 1 bank idle
tRC=min, tCLK=min
CKE <0.2v
both banks active, tCLK=min, CKE=H
M5M4V4S40CTP-12, -15
IOH=-2mA
IOL= 2mA
Q floating VO=0 ~ VddQ
VIH = 0 ~ VddQ+0.3V
Test Conditions
Test Conditions
Min.
-10
-10
2.4
Limits
Limits(max)
130
120
-12
90
60
18
35
MITSUBISHI LSIs
2
1
Max.
0.4
10
10
110
100
-15
75
16
30
50
1
2
Unit
mA
mA
mA
mA
mA
mA
mA
mA
Unit
µA
µA
V
V
28

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