SI4418DY-E3 VISHAY [Vishay Siliconix], SI4418DY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4418DY-E3
• Description: N-Channel 200-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4418DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
12
10
b
8
6
4
2
0
0
Parameter
a
a
1
V
DS
a
Output Characteristics
− Drain-to-Source Voltage (V)
a
a
J
V
2
GS
= 25_C UNLESS OTHERWISE NOTED)
= 10 thru 6 V
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5 V
4 V
New Product
5
V
V
I
DS
D
DS
^ 1 A, V
I
= 200 V, V
= 100 V, V
V
V
F
V
V
V
V
V
DD
DD
DS
= 2.1 A, di/dt = 100 A/ms
V
V
I
DS
DS
DS
Test Condition
GS
S
GS
DS
= 2.1 A, V
= 100 V, R
= 100 V, R
= 0 V, V
= V
= 200 V, V
w 5 V, V
= 6.0 V, I
= 10 V, I
= 15 V, I
GEN
f = 1 MHz
GS
GS
GS
, I
= 10 V, R
GS
D
= 0 V, T
GS
= 10 V, I
GS
D
D
L
L
= 250 mA
GS
= "20 V
D
= 2.8 A
= 3 A
= 100 W
= 100 W
= 10 V
= 0 V
= 3 A
= 0 V
12
10
J
G
8
6
4
2
0
D
= 85_C
= 6 W
0
= 3 A
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
2
12
2
1
T
25_C
3
C
0.120
0.110
Typ
= 125_C
0.8
4.5
6.5
13
20
15
15
40
20
70
S-32412—Rev. B, 24-Nov-03
2
Document Number: 72513
4
Max
"100
0.130
0.142
110
1.2
3.4
20
30
25
25
60
30
4
1
5
−55_C
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
6