SI4418DY-E3 VISHAY [Vishay Siliconix], SI4418DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4418DY-E3
• Description: N-Channel 200-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72513
S-32412—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3 A
0.2
On-Resistance vs. Drain Current
2
= 100 V
4
V
SD
Q
T
g
J
− Source-to-Drain Voltage (V)
I
= 150_C
0.4
− Total Gate Charge (nC)
D
4
− Drain Current (A)
Gate Charge
8
0.6
6
V
GS
12
= 6.0 V
0.8
8
T
V
J
GS
= 25_C
16
1.0
= 10 V
10
1.2
12
20
New Product
1600
1400
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
10
GS
= 3 A
= 10 V
C
2
rss
T
V
V
20
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
30
25
Capacitance
4
Vishay Siliconix
C
40
50
C
oss
iss
I
6
D
50
75
= 3 A
Si4418DY
100
60
www.vishay.com
8
125
70
150
10
80
3