SI4943BDY-E3 VISHAY [Vishay Siliconix], SI4943BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4943BDY-E3
• Description: Dual P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4943BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
V
1
V
DS
GS
a
Output Characteristics
= 10 thru 5 V
− Drain-to-Source Voltage (V)
a
a
J
2
= 25_C UNLESS OTHERWISE NOTED)
4 V
3
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
)
4
3 V
New Product
V
5
V
I
DS
D
DS
^ −1 A, V
= −10 V, V
I
F
= −20 V, V
V
V
V
V
V
V
V
V
= −1.7 A, di/dt = 100 A/ms
V
GS
GS
I
DS
DS
DS
S
DS
DD
DD
Test Condition
DS
= −1.7 A, V
= V
= −5 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −20 V, V
= −10 V, R
= −10 V, R
= 0 V, V
f = 1 MHz
GEN
GS
GS
GS
, I
= −10 V, R
= −5 V, I
D
= 0 V, T
GS
GS
D
= −250 mA
D
D
GS
GS
L
L
= −8.4 A
= −8.4 A
= −6.7 A
= "20 V
= −10 V
= 10 W
= 10 W
= 0 V
= 0 V
D
J
30
24
18
12
= 55_C
= −8.4 A
g
6
0
0.0
= 6 W
0.5
1.0
V
GS
Transfer Characteristics
Min
−30
−1
− Gate-to-Source Voltage (V)
6
1.5
T
C
25_C
2.0
= 125_C
0.016
0.026
−0.75
Typ
6.7
20
17
12
10
94
60
55
11
5
2.5
S-41527—Rev. A, 16-Aug-04
Document Number: 73073
3.0
"100
−55_C
Max
0.019
0.031
−1.2
140
−3
−1
−5
25
18
17
15
90
80
3.5
4.0
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
4.5