SI4943BDY-E3 VISHAY [Vishay Siliconix], SI4943BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4943BDY-E3
• Description: Dual P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 73073
S-41527—Rev. A, 16-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
0.2
= 8.4 A
On-Resistance vs. Drain Current
5
= 10 V
5
= 4.5 V
V
SD
Q
0.4
T
g
J
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
10
D
10
= 150_C
− Drain Current (A)
Gate Charge
0.6
15
15
0.8
20
20
1.0
T
V
J
GS
= 25_C
= 10 V
25
25
1.2
1.4
30
30
New Product
2100
1800
1500
1200
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
C
= 8.4 A
rss
= 10 V
2
4
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
4
8
Vishay Siliconix
50
I
D
C
= 8.4 A
C
oss
iss
12
6
Si4943BDY
75
100
16
www.vishay.com
8
125
150
10
20
3