SI4943BDY-E3 VISHAY [Vishay Siliconix], SI4943BDY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4943BDY-E3
• Description: Dual P-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4943BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
I
D
50
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
1
0.1
−2
Safe Operating Area, Junction-to-Ambient
r
125
Limited
DS(on)
I
D(on)
Single Pulse
Square Wave Pulse Duration (sec)
T
A
150
Limited
V
= 25_C
New Product
DS
− Drain-to-Source Voltage (V)
10
BV
1
−1
DSS
Limited
10
1
I
DM
50
40
30
20
10
0
10
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
−2
100
10
−1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
− T
t
A
Time (sec)
1
= P
1
t
2
DM
Z
thJA
thJA
100
S-41527—Rev. A, 16-Aug-04
t
t
1
2
(t)
Document Number: 73073
10
= 80_C/W
100
600
600