mx28f1000p Macronix International Co., mx28f1000p Datasheet - Page 11

• Manufacturer Part Number: mx28f1000p
• Description: 1m-bit [128k X 8] Cmos Flash Memory
• Manufacturer: Macronix International Co.

ABSOLUTE MAXIMUM RATINGS
CAPACITANCE TA = 25
READ OPERATION
DC CHARACTERISTICS
NOTES:
1. VIL min. = -1.0V for pulse width < 50 ns.
2. VIH max. = VCC + 1.5V for pulse width < 20 ns
P/N: PM0340
RATING
Ambient Operating Temperature
Storage Temperature
Applied Input Voltage
Applied Output Voltage
VCC to Ground Potential
A9 & VPP
SYMBOL
CIN
COUT
SYMBOL
ILI
ILO
IPP1
ISB1
ISB2
ICC1
ICC2
VIL
VIH
VOL
VOH
VIL min. = -2.0V for pulse width < 20 ns.
If VIH is over the specified maximum value, read operation
cannot be guaranteed.
Input Leakage Current
PARAMETER
Input Capacitance
Output Capacitance
PARAMETER
Output Leakage Current
VPP Current
Standby VCC current
Operating VCC current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
o
C, f = 1.0 MHz
VALUE
-40
-65
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 7.0V
-0.5V to 13.5V
o
o
C to 85
C to 125
o
C
o
C
MIN.
MIN.
-0.3
2.4
2.4
(NOTE 1)
11
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXI-
MUM RATINGS may cause permanent damage to the de-
vice. This is stress rating only and functional operational
sections of this specification is not implied. Exposure to ab-
solute maximum rating conditions for extended period may
affect reliability.
NOTICE:
Specifications contained within the following tables are sub-
ject to change.
3. Test condition:
4.ICC1=35mA for TA=-40°C to 85°C
TYP
TYP
1
1
TA =-40°C to 85°C, Vcc = 5V±10%, Vpp = GND to Vcc, CL
= 100pF(for MX28F1000P-90/12)
TA = -40°C to 85°C, Vcc = 5V±10%, Vpp = GND to Vcc, CL
= 35pF(for MX28F1000P-70)
MAX.
14
16
MAX.
10
10
1
100
30(NOTE4) mA
50
0.8
VCC + 0.3 V
0.45
100
MX28F1000P
uA
UNIT
pF
pF
UNIT
uA
uA
uA
mA
mA
V
V
V
CONDITIONS
VIN = 0V
VOUT = 0V
CONDITIONS
VIN = GND to VCC
VOUT = GND to VCC
VPP = 5.5V
CE = VIH
CE = VCC + 0.3V
IOUT = 0mA, f=1MHz
IOUT = 0mA, f=11MHz
IOL = 2.1mA
IOH = -400uA
REV. 1.6, JAN. 19, 1999