SI1433DH-T1 VISHAY [Vishay Siliconix], SI1433DH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1433DH-T1
• Description: P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72323
S-31668—Rev. A, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.75
0.60
0.45
0.30
0.15
0.00
0.1
10
10
1
8
6
4
2
0
0.00
0
0
V
I
D
1
Source-Drain Diode Forward Voltage
DS
= 2.2 A
V
On-Resistance vs. Drain Current
1
V
T
GS
= 15 V
0.3
J
SD
= 150_C
= 4.5 V
2
Q
- Source-to-Drain Voltage (V)
g
I
D
- Total Gate Charge (nC)
2
- Drain Current (A)
3
Gate Charge
0.6
4
3
0.9
T
5
J
= 25_C
4
V
GS
6
1.2
= 10 V
5
7
1.5
8
6
New Product
0.70
0.56
0.42
0.28
0.14
0.00
350
280
210
140
1.6
1.4
1.2
1.0
0.8
0.6
70
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
rss
GS
= 2.2 A
V
V
= 10 V
2
6
DS
T
GS
J
0
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
oss
25
Capacitance
12
4
C
Vishay Siliconix
I
50
D
iss
= 2.2 A
18
6
75
Si1433DH
100
24
8
www.vishay.com
125
150
10
30
3