SI1433DH-T1 VISHAY [Vishay Siliconix], SI1433DH-T1 Datasheet - Page 4

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SI1433DH-T1

Manufacturer Part Number
SI1433DH-T1
Description
P-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Si1433DH
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
I
D
T
Threshold Voltage
= 250 mA
J
- Temperature (_C)
25
10
-3
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
100
0.01
0.1
-2
10
Limited by
1
0.1
r
DS(on)
125
Square Wave Pulse Duration (sec)
Single Pulse
T
150
C
V
= 25_C
DS
New Product
10
Safe Operating Area
- Drain-to-Source Voltage (V)
-1
1
10
1
35
28
21
14
0.001
7
0
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
100
0.01
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
Time (sec)
1
= P
t
2
0.1
DM
Z
thJA
100
thJA
t
t
1
2
(t)
S-31668—Rev. A, 11-Aug-03
= 105_C/W
Document Number: 72323
1
600
10

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